可控液体输运制备取向聚合物薄膜:面向性能增强的发光二极管

提出了一种由锥形纤维阵列引导的定向液体输运的简单策略, 实现了对聚二芳基芴(PODPF)的有序 排列. 通过热退火处理(～240 ℃), PODPF由无定形相转变为β相态, 制备的PODPF薄膜具有一定的取向性 并且结晶尺寸更大. 在去浸润过程中, 锥形纤维阵列能够精确控制三相接触线的后退, 从而使得共轭高分子在产生的定向应力作用下定向排列. 基于此制备了聚合物发光二极管(PLEDs)器件, 与由旋涂膜制备的器件相比具有更高的电流效率(1.53 cd/A)和更稳定的电致发光. 表明利用锥形纤维阵列可以制备高性能的有机发光 二极管.     

The Impact of C2 Insertion into a Carbazole Donor on the Physicochemical Properties of Dibenzo[a,j]phenazine-Cored Donor–Acceptor–Donor Triads

Novel electron donor–acceptor–donor (D-A-D) compounds comprising dibenzo[a,j]phenazine as the central acceptor core and two 7-membered diarylamines (iminodibenzyl and iminostilbene) as the donors have been designed and synthesized. Investigation of their physicochemical properties revealed the impact of C₂ insertion into well-known carbazole electron donors on the properties of previously reported twisted dibenzo[a,j]phenazine-core D-A-D triads. Slight structural modification caused a drastic change in conformational preference, allowing unique photophysical behavior of dual emission derived from room-temperature phosphorescence and triplet–triplet annihilation. Furthermore, electrochemical analysis suggested sigma-dimer formation and electrochemical polymerization on the electrode. Quantum chemical calculations also rationalized the experimental results.     

Highly Emissive 9-Borafluorene Derivatives: Synthesis,Photophysical Properties and Device Fabrication

A series of 9-borafluorene derivatives, functionalised with electron-donating groups, have been prepared. Some of these 9-borafluorene compounds exhibit strong yellowish emission in solution and in the solid state with relatively high quantum yields (up to 73.6 % for FMesB-Cz as a neat film). The results suggest that the highly twisted donor groups suppress charge transfer, but the intrinsic photophysical properties of the 9-borafluorene systems remain. The new compounds showed enhanced stability towards the atmosphere, and exhibited excellent thermal stability, revealing their potential for application in materials science. Organic light-emitting diode (OLED) devices were fabricated with two of the highly emissive compounds, and they exhibited strong yellow-greenish electroluminescence, with a maximum luminance intensity of >22 000 cd m⁻². These are the first two examples of 9-borafluorene derivatives being used as light-emitting materials in OLED devices, and they have enabled us to achieve a balance between maintaining their intrinsic properties while improving their stability.     

用于宽谱带发射白色发光二极管的黄色荧光粉Sr8MgAl(PO4)7∶xEu2+的制备及发光性能

通过高温固相反应合成了一系列宽谱带发射黄色荧光粉Sr_8MgAl(PO_4)_7∶x Eu~(2+)(SMAP∶x Eu~(2+)),并对其物质结构、发光性能及其在白色发光二极管(WLED)领域的应用进行了探究。X射线衍射(XRD)测试结果表明,SMAP∶x Eu~(2+)系列荧光粉具有单斜结构和C2/m空间群,激活剂Eu~(2+)离子能够很好地进入SMAP基质中并占据Sr~(2+)离子的晶格位点。漫反射光谱分析显示SMAP基质属于宽带隙材料,带隙宽度为3.60 e V。此外,SMAP∶x Eu~(2+)具有较宽的激发范围(280～500 nm),对应于Eu~(2+)离子的4f~7→4f~65d~1跃迁;在380 nm近紫外光激发下,呈现出450～800 nm的多发光中心的非对称黄光发射,发射峰位于590 nm处。基于高斯多峰拟合结果,得到3个发光中心,分别位于528、600和680 nm。最后,将已制备的黄色荧光粉SMAP∶0.05Eu~(2+)与商业化蓝粉Ba Mg Al_(10)O_(17)∶Eu~(2+)混合涂覆到400 nm芯片上制得色温较好(3 344 K)、显色指数较高(90.1)的WLED。     

Quinoline-based aggregation-induced delayed fluorescence materials for highly efficient non-doped organic light-emitting diodes

Three new emitters,namely 10,10'-(quinoline-2,8-diyl)bis(10 H-phenoxazine)(Fene),10,10'-(quinoline-2,8-diyl)bis(10 H-phenothiazine)(Fens) and 10,10'-(quinoline-2,8-diyl)bis(9,9-dimethyl-9,10-dihydroacridine)(Yad),featuring quinoline as a new electron acceptor have been designed and conveniently synthesized.These emitters possessed small singlet-triplet splitting energy(ΔEst) and twisted structures,which not only endowed them show thermally activated delayed fluorescence(TADF)properties but also afforded a remarkable aggregation-induced emission(AIE) feature.Moreover,they also showed aggregation-induced delayed fluorescence(AIDF) property and good photoluminescence(PL) property,which are the ideal emitters for non-doped organic light-emitting diodes(OLEDs).Furthermore,high-performance non-doped OLEDs based on Fene,Fens and Yad were achieved,and excelle nt maximum external quantum efficiencies(EQE_(max)) of 14,9%,13.1% and 17,4%,respectively,were obtained.It was also found that all devices exhibited relatively low turn-on voltages ranging from 3.0 V to3.2 V probably due to their twisted conformation and the AIDF properties.These results demonstrated the quinoline-based emitters could have a promising application in non-doped OLEDs.     

In-plane ESPI using an achromatic interferometer with low-coherence laser source

The use of an achromatic interferometer is explored as a means of doing in-plane ESPI measurements using a laser diode as the light source. This interferometer type, which uses a diffraction grating in place of the conventional beamsplitter, has two features that make it suitable for making ESPI measurements over extended areas, even when using a low-coherence laser diode source. First, the parallelogram optical geometry of the interferometer causes all rays passing through to have the same optical path lengths. Second, the interferometer is achromatic, whereby the piezo-actuated mirror that steps the illumination light does so by the same phase angle, independent of wavelength. This latter feature accommodates the spectral impurity of a laser diode source. A periodic variation of fringe visibility is observed in experiments, where narrow ranges of high visibility occur at regular spatial intervals. This behavior derives from the clustered discrete spectral character of laser diode light output. A method to “tune” the interferometer by slightly rotating the diffraction grating is described so as to achieve consistent high fringe visibility throughout the measured images.     

利用固体物理LED发光原理测量普朗克常数

普朗克常数是物理学中一个重要的常数,利用二极管的量子特性探讨运用发光二极管来测量普朗克常数。通过测量二极管的伏安曲线,确定其阈值电压,根据相关量子理论,间接得出普朗克常数,通过与光电效应法测量普朗克常数的测量结果相比较,结果表明此误差略大,但作为一种新型的实验方法探索,对于开拓学生的综合素养还是非常有益的。     

A novel red-emitting phosphor Ca9Bi(PO4)7:Eu3+ for near ultraviolet white light-emitting diodes

Red phosphors Ca₉Bi_1-x(PO₄)₇:xEu³⁺ (x = 0.06, 0.10, 0.20, 0.30, 0.40, 0.50, 0.60, 0.70, 0.80 and 1.00) were synthesized by a conventional solid-state reaction (SSR) route. The X-ray diffraction patterns, photoluminescence spectra, ultraviolet–visible reflection spectroscopy, decay time and the International Commission on Illumination (CIE) chromaticity coordinates of these compounds were characterized and analyzed. The Eu-doped Ca₉Bi(PO₄)₇ phosphors exhibited strong red luminescence which peaks located at 615 nm due to the ⁵D₀→⁷F₂ electric dipole transition of Eu³⁺ ions after excitation at 393 nm. Ultraviolet–visible spectra indicated that the band-gap of Ca₉Bi_0.30(PO₄)₇:0.70Eu³⁺ is larger than that of Ca₉Bi(PO₄)₇. The results indicate that the phosphor Ca₉Bi_0.30(PO₄)₇:0.70Eu³⁺ can be a suitable red-emitting phosphor candidate for LEDs.     

The beneficial effects of a p-type GaInN spacer layer on the efficiency of GaInN/GaN light-emitting diodes

Light-emitting diodes (LEDs) with a Mg-doped p-type Ga_1−xIn_xN (0 ≤ x ≤ 0.07) spacer layer located between an undoped GaN spacer layer and the electron blocking layer are investigated. The LEDs are found to have comparable peak efficiency but less efficiency droop when the crystal quality of the p-type Ga_1−xIn_xN spacer layer is well-controlled by lowering the growth temperature and by using a suitable In composition and Mg doping concentration. All LED samples with the p-type spacer layer show a smaller efficiency droop compared to a reference LED having an undoped GaN spacer. Among the sample sets investigated, an optical power enhancement of 12% at 111 A/cm² is obtained when inserting a 5 nm-thick p-type Ga_0.97In_0.03N spacer layer. The results support that carrier transport is the key factor in the efficiency droop observed in GaN-based LEDs.